By A. R. Alvarez (auth.), A. R. Alvarez (eds.)
The subject of bipolar suitable CMOS (BiCMOS) is an engaging one and of ever-growing functional value. The "technology pendulum" has swung from the 2 extremes of preeminence of bipolar within the Nineteen Fifties and 60s to the obvious never-ending horizons for VLSI NMOS expertise throughout the Nineteen Seventies and 80s. but beginning within the Eighties severallimits have been clouding the horizon for natural NMOS expertise. CMOS reemerged as a· conceivable excessive density, excessive functionality expertise. equally via the mid Nineteen Eighties scaled bipolar units had not just confirmed new excessive pace files, yet early types of combined bipolar/CMOS expertise have been being produced. consequently the paradigm of both excessive density . Q[ excessive velocity used to be metamorphasizing into a chance for either velocity and density through a BiCMOS process. Now as we strategy the Nineteen Nineties there were a few useful demonstrations of BiCMOS either for reminiscence and common sense functions and that i anticipate the rage to enhance over the subsequent decade. This publication makes a well timed contribution to the sector of BiCMOS expertise and circuit improvement. The evolution is now certainly fast in order that it's tough to make this kind of publication exhaustive of present advancements. most likely both tricky is the truth that the recent expertise opens various novel circuit possibilities which are as but purely formative of their improvement. Given those hindrances it's a herculean activity to aim to gather a publication on BiCMOS.
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Extra info for BiCMOS Technology and Applications
The close proximity of the drain to the channel region causes a significant amount of the bulk charge in the channel to be terminated by the drain depletion charge; more of the charge on the gate is available to terminate on charge in the inversion layer, and thus the current is greater than predicted by first-order theory. 3]. An alternate explanation is that the close proximity of the drain to the source allows the drain to reduce the potential barrier at the source end of the channel, which increases the flow of carriers into the channel.
This results in a buried-channel device. For such a device, the trans verse electric field penetrates deeper into the silicon, and the minimum potential barrier is subsurface (fig. 8). Although this typically results in a 15% improvement in mobility and a higher IDsat compared to a surface channel device, DIBL is much more severe; 11V G in the subthreshold region can be twice as high or more compared to a surface channel device. Therefore, special processing such as punchthrough implants or retrograde wells must be used to contral the short-channel behavior.
27]. 25]. Collector Design Issues. In the collector, the minimum acceptable doping is set by high level injection considerations (Kirk effect). This effect occurs when the density of electrons transported across the collec1Or-base space charge layer is comparable to the doping in the collector. These carriers cause a spreading out of the electric field and ultimately high injection of both electrons and holes into the collector. This is termed base push-out. The switching speed of the transistor is now degraded due to the increased effective base width and the increased hole storage.